Determination of Thin Film Ba_(0.5)Sr_(0.5)TiO_3 Ferroelectric Effective Mass from I-V Characteristics Calculation Using Transfer Matrix Method

摘要

In this paper, we present current-voltage model characterization calculation of Ba_(0.5)Sr_(0.5)TiO_3 (BST) ferroelectric-based solar cell to determine its effective mass. Ba_(0.5)Sr_(0.5)TiO_3 doped Ga_2O_3 15% (BST 15%) grown on Si substrate by spin coating process and annealed at temperature of 900 °C. IV characteristics was measured by using simple IV meter. Numerical calculation was done using Transfer Matrix Method (TMM). Fitting between the calculations results with experiment data can be done by varying the (BST 15%) effective mass value, while Si substrate effective mass was kept at 0.19 m_0. Fitting result shows that effective mass of BST 15 % is 0.5 m_0 and calculations show results more fit to experiment data on light current condition compared to dark current.