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Direct Chemical Vapor Deposition Synthesis of Phase-Pure Iron Pyrite Thin Films

机译:直接化学气相沉积合成相纯铁硫铁矿薄膜

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Iron pyrite has seen a renewed interest in the past few years as a promising earth-abundant, non-toxic semiconductor material for solar energy conversion. Pyrite has many appealing properties such as direct/indirect bandgaps of 1.03 & 0.95 eV, large absorptivity of 6×10~5 cm~(-1), and high carrier mobility (for single crystals). However, recent attempts to make solar cells using pyrite nanostructures or thin films have been hampered by the presence of impurity phases (such as the marcasite polymorph)' and an observed defect-induced degenerately-doped behavior, which lead to low or no photovoltage. Even though we have shown methods to synthesize phase-pure pyrite nanowires, nanorods, nanobelts and nanoplates. To date, the only means of synthesizing phase purity pyrite thin films requires a harsh sulfidation step at high temperatures to eliminate the other impurity phases.
机译:铁黄铁矿在过去几年中,这是一种有前途的地球丰富,无毒的半导体材料,用于太阳能转换。黄铁矿具有许多有吸引力的性质,如1.03&0.95 EV的直接/间接带隙,6×10〜5cm〜(-1)的吸收率大,以及高载流子移动(用于单晶)。然而,最近试图通过杂质阶段(例如马基酯多晶型物)的存在和观察到的缺陷诱导的掺杂行为阻碍了使用硫铁矿纳米结构或薄膜的太阳能电池被阻碍,这导致低或没有光电电压。尽管我们已经显示了合成相纯硫铁矿纳米线,纳米棒,纳米核和纳米层的方法。迄今为止,合成相纯度硫铁矿薄膜的唯一装置需要在高温下苛刻的硫化步骤以消除其他杂质相。

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