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Studying The Sintering Behavior of Y2O3-SiC, Composites Ceramic materials

机译:研究Y2O3-SiC,复合材料陶瓷材料的烧结行为

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Yettμria, silicon carbide powders of (99.99) purity having (80-100) μm grain size were used to form different combinations of the system Y2O3- SiC . Silicon carbide was added in weight percent ranging (5, 10,15and 20) .Sintering proses were done for all the combinations at different sintering temperature (800, 1000, 1200 and 1400) C under static air and for three hours. XRD test reflect the formation of new phase which is Y5Si3C (Unique). Sintered density, theoretical density and micro structure were investigated too .Improvement was noticed for all the combinations after adding Sic, and sintered at different sintering temperature. This was detected maximally at the combination (Y2O3 80-SiC20) Wt. %, sintered at 1400 ?.
机译:Yettμria,(99.99)纯度(80-100)μm粒度的碳化硅粉末用于形成系统Y2O3-SiC的不同组合。加入碳化硅的重量百分比范围(5,10,15和20)。在静态空气下不同烧结温度(800,1000,1200和1400)C的所有组合进行嵌入方法。 XRD测试反映了新阶段的形成,即Y5SI3C(独特)。研究了烧结密度,理论密度和微结构。在添加SiC后,所有组合都注意到了,并在不同的烧结温度下烧结。这在组合(Y2O3 80-SiC20)WT中最大地检测到这一点。 %,烧结在1400?。

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