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Characteristics of Nano-crystalline Ge_2Sb_2Te_5 material for Phase Change Memory

机译：相变存储器纳米晶GE_2SB_2TE_5材料的特性

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We report on nano-crystalline Ge_2Sb_2Te_5 (GST), which has nanometer-sized GST crystals. The transition temperature from the amorphous to the crystalline state was improved compared to that of non-doped and SiO_2-doped GST. Structure analysis was conducted by transmission electron microscopy (TEM) and x-ray absorption fine structure (XAFS) spectroscopy.

机译：我们报告了具有纳米尺寸的GST晶体的纳米结晶GE_2SB_2TE_5（GST）。与非掺杂和SiO_2掺杂的GST相比，从非晶与结晶状态的过渡温度得到改善。通过透射电子显微镜（TEM）和X射线吸收细结构（XAFS）光谱进行结构分析。

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《Symposium on nonvolatile memories》|2013年||共4页
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Takasumi Ohyanagi; Norikatsu Takaura;
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1. Effect of Dielectric Material Films on Crystallization Characteristics of Ge_2Sb_2Te_5 Phase-Change Memory Film [J] . Kenichi Nishiuchi, Noboru Yamada, Katsumi Kawahara, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第11Pt1期

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2. Carbon-doped Ge_2Sb_2Te_5 phase change material: A candidate for high-density phase change memory application [J] . Xilin Zhou, Liangcai Wu, Zhitang Song, Applied Physics Letters . 2012,第14期

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3. Phase Transition Characteristics and Device Performance of Sn-doped Ge_2Sb_2Te_5 in Phase Change Random Access Memory [J] . Tae Jin Park, Dae Hyun Kim, Sung Min Yoon, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2006,第46a50期

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4. Characteristics of Nano-crystalline Ge_2Sb_2Te_5 material for Phase Change Memory [C] . Takasumi Ohyanagi, Norikatsu Takaura Symposium on nonvolatile memories . 2013

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Characteristics of Nano-crystalline Ge_2Sb_2Te_5 material for Phase Change Memory

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