Detection and analysis of subsurface cracks of single crystal SiC wafers based on cross-sectional microscopy method

摘要

For subsurface crack detection of single crystal SiC wafer, this paper proposed a cross-sectional cleavage detection method and compared with traditional cross-sectional sample preparation method. The characteristics and detection results of two cross-sectional sample preparation methods were compared and the subsurface crack characteristics in SiC wafer grinding were researched. The results show that the configurations and depth of subsurface cracks measured by two cross-sectional sample preparation methods were similar. The cross-sectional cleavage sample preparation method is simpler and more rapid in subsurface crack detection. The subsurface crack system of single crystal SiC wafer grinding mainly includes lateral crack and median crack.