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Topological Insulators/Superconductors: Potential Future Electronic Materials

机译:拓扑绝缘子/超导体:潜在的未来电子材料

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A new material called topological insulator has been discovered and becomes one of the fastest growing field in condensed matter physics. Topological insulator is a new quantum phase of matter which has Dirac-like conductivity on its surface, but bulk insulator through its interior. It is considered a challenging problem for the surface transport measurements because of dominant internal conductance due to imperfections of the existing crystals of topological insulators. By a proper method, the internal bulk conduction can be suppressed in a topological insulator, and permit the detection of the surface currents which is necessary for future fault-tolerant quantum computing applications. Doped topological insulators have depicted a large variety of bulk physical properties ranging from magnetic to superconducting behaviors. By chemical doping, a TI can change into a bulk superconductor. Nb_xBi_2Se_3 is shown to be a superconductor with T_c ~ 3.2 K, which could be a potential candidate for a topological superconductor.
机译:已经发现了一种称为拓扑绝缘体的新材料,并成为冷凝物理学中最快的生长领域之一。拓扑绝缘体是一种新的量子阶段,它的表面上具有狄拉氏电导率,但通过其内部散装绝缘体。由于拓扑绝缘体的现有晶体的缺陷,所以由于缺陷的内部电导,因此认为表面传输测量是一个具有挑战性的问题。通过适当的方法,可以在拓扑绝缘体中抑制内部散装传导,并允许检测未来容错量计算应用所需的表面电流。掺杂的拓扑绝缘体已经描绘了从磁力到超导行为的大量散装物理性质。通过化学掺杂,Ti可以变成散装超导体。 Nb_xbi_2se_3被示出为具有T_c〜3.2k的超导体,这可能是拓扑超导体的潜在候选者。

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