Dielectric Properties of Mg-Doped CaCu_3Ti_4O_(12) Measured at High Frequencies

摘要

Mg-doped CaCu_3Ti_4O_(12) (CCTO) systems were prepared by solid state reaction using raw materials of CaCO_3, CuO, TiO_2 and MgO. The samples were calcined at 900°C for 12 hours and sintered at 1030°C for 10 hours. Single phase CCTO formed after sintering process. It was found that dielectric constant and dielectric loss of CCTO improved by MgO dopant.