The Evolvement Of The Transport Mechanism With The Ensemble Density Of Si Quantum Dots

摘要

In this review I will try to suggest a comprehensive understanding of the transport mechanisms in three dimensional systems of Si quantum dots (QDs) from the single QD to the very dense ensembles. This understanding is based on our systematic microscopic and macroscopic electrical measurements as a function of the density of Si nanocrystallites. In particular, the role of quantum confinement and Coulomb blockade effects in the transport will be discussed and the concept of QDs' "touching" will be applied. This consideration will enable to reveal the presence of two transitions, a local carrier deconfinement transition and a percolation transition at which these effects are reminiscent of those found in the single QD. It is hoped that our discussion of the evolvement of the transport with the density of the QDs will provide guidance for the understanding of ensembles of semiconductor QDs in general and ensembles of Si QDs in particular.