首页> 外国专利> Electron transport layer, quantum dot light-emitting devices comprising the same, single carrier devices for evaluating the electron transport layer and method for fabricating the same

Electron transport layer, quantum dot light-emitting devices comprising the same, single carrier devices for evaluating the electron transport layer and method for fabricating the same

机译:电子传输层,包含相同的单载体器件的量子点发光器件,用于评估电子传输层和制造方法的方法

摘要

An improved electron transport layer and a quantum dot light emitting device including the same are provided. A single charge device suitable for the evaluation of an improved electron transport layer and a method for manufacturing the same are also provided. The electron transport layer according to the present invention is characterized in that it includes magnesium hydroxide [Mg(OH) 2 ] and magnesium (Mg) doped zinc oxide (ZnO) nanoparticles. The single charge device according to the present invention includes a first electrode, a lower electron transport layer, a quantum dot light emitting layer, an upper electron transport layer and a second electrode sequentially stacked, wherein the upper electron transport layer is an electron transport layer according to the present invention, and the lower The electron transport layer is different from the upper electron transport layer, and it is characterized in that it is for evaluating electron injection characteristics from the upper electron transport layer to the quantum dot emission layer.
机译:提供了一种改进的电子传输层和包括该的量子点发光装置。还提供了一种适用于评估改进的电子传输层的单个电荷装置及其制造方法。根据本发明的电子传输层的特征在于它包括氢氧化镁[Mg(OH)2]和镁(Mg)掺杂的氧化锌(ZnO)纳米颗粒。根据本发明的单充电装置包括第一电极,下电子传输层,量子点发光层,上电子传输层和依次堆叠的第二电极,其中上电子传输层是电子传输层根据本发明,电子传输层与上电子传输层的不同,其特征在于,它用于评估来自上电子传输层的电子喷射特性到量子点发射层。

著录项

  • 公开/公告号KR20220000303A

    专利类型

  • 公开/公告日2022-01-03

    原文格式PDF

  • 申请/专利权人 주식회사 엘지화학;

    申请/专利号KR1020200078083

  • 申请日2020-06-25

  • 分类号H01L51/50;C01G9/02;C09K11/02;C09K11/08;H01L51;H01L51/56;

  • 国家 KR

  • 入库时间 2022-08-24 23:25:26

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