A millimeter wave 11W GaN MMIC power amplifier

摘要

A 11W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 um T-gate field plated AlGaN/GaN high electron mobility transistors (HEMTs) in a microstrip transmission line technology on 3-inch SiC substrate. Saturated output power of 40.5dBm and peak power-added-efficiency of 20% were measured at 29GHz with the pulsed DC supply voltage of 24 V. Across the 28–31 GHz range, the amplifier delivers output power above 39.3 dBm with power added efficiency over 15%.