Anti-ESD Improvement of a Power nLDMOS with a Perpendicular Super-junction Construction in the Drain Side

摘要

An HV 60-V nLDMOS by adding a perpendicular-type super-junction (SJ) structure and changing pillar widths in the drain side will be investigated in this paper. In order to verify some physical parameters influences on the ESD capability, a TLP testing equipment will be used for obtaining the secondary breakdown current (I_(t2)) in different DUTs. In I_(t2) values comparison, an SJ-nLDMOS is higher than that of a traditional nLDMOS, and as the pillar width increased the equivalent HBM value can be up to 4.799-kV. Finally, from the relationship between the SJ-nLDMOS and Ref. DUT, it can be found that an SJ structure is good for ESD discharge, as compared with the Ref. group can be increasing by 25%. In addition, the V_(t1) and V_h value of various kinds of SJ-nLDMOS will decline than the traditional nLDMOS.