Study of the behavior of 3d-shell electrons in ZnO based varistors doped with Semiconductor Additives

摘要

The behavior of 3d-shell electrons in ZnO-based varistors doped with semiconductor additives has been investigated. The 3d-shell electron details of the varistors can be extracted by a two-detector coincidence system of the Doppler broadening of positron annihilation radiation. It has been found that the 3d electron signal in semi-Z doped varistors is relatively high as compared with other varistors. The nonlinear coefficient of the sample decreases with the d-d interaction, and the leakage current of the specimen increases with the d-d interaction.