Electrical and Structural Properties of TiO_2 Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method

摘要

Titanium Dioxide (TiO_2) thin films have been prepared on glass substrates by using solgel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO_2 thin films improved as annealed at higher temperatures.