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Dielectric Properties of PVDF/MgO Nanocomposites Thin Film with Various Annealing Temperatures

机译:PVDF / MgO纳米复合材料薄膜具有各种退火温度的介电性能

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Poly(vinylideneflouride)/nano-magnesium oxide (PVDF/MgO) nanocomposites with MgO loading percentage of 7% were annealed with various annealing temperatures ranging from 70°C to 170°C. The PVDF/MgO(7%) thin films were fabricated using spin coating technique with MIM structure. The dielectric constant of PVDF/MgO(7%) was studied over a wide range of annealing temperatures with rapid removal from the oven once the annealing was utilized. The nanocomposites thin films annealed at temperature of 70°C (AN70) shows an improvement in the dielectric constant of 23 at 10~3 Hz compared to unannealed sample (UN), which was 21 at the same frequency. However, as the annealing temperatures were increased from 90°C (AN90) to 170°C(AN170), the dielectric constant of PVDF/MgO(7%) were found to decrease from 16 to 7 respectively, which were lower than the UN thin films. AN70 also produced low value of tangent loss at low frequency, (tan δ) indicating that, annealing at temperatures 70°C is favourable temperature used to improve the dielectric constant of PVDF/MgO(7%).
机译:聚(vinylideneflouride)/ 7%的MgO装载百分比氧化物纳米镁(PVDF / MgO)的纳米复合材料进行退火以各种退火温度范围从70℃至170℃。将PVDF / MgO比(7%)薄膜,使用旋涂技术用MIM结构制造。 PVDF /氧化镁(7%)的介电常数大范围与来自一次退火被利用烘箱快速去除退火温度进行了研究结束。纳米复合材料薄膜,在70°C(AN70)示出了在10 -3赫兹在23的介电常数的提高相比,未退火样品(UN),它以相同的频率为21温度下退火。然而,随着退火温度从90℃(AN90)升高至170℃(AN170),PVDF的介电常数/发现MgO的(7%),以分别减少16至7,其均低于UN下薄膜。 AN70也在这表明低频率,(黄褐色δ)产生的损耗角正切的值低,在退火温度70℃是用于改进PVDF /氧化镁(7%)的介电常数有利的温度。

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