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Electronic Transport and Doping Effects in Reduced Graphene Oxide Measured by Scanning Probe Microscopy

机译:通过扫描探针显微镜测量的石墨烯的电子输送和掺杂效应

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We present a Scanning Probe Microscopy study of doping and sensing properties of reduced graphene oxide (rGO)-based nanosensors. rGO devices are created by dielectrophoretic assembly of rGO platelets onto interdigitated electrode arrays, which are lithographically pre-patterned on top of SiO_2/Si wafers. The availability of several types of oxygen functional groups allows rGO to interact with a wide range of organic dopants, including methanol, ethanol, acetone, and ammonia. We perform sensitive Scanning Kelvin Probe Microscopy (SKPM) measurements on patterned rGO electronic circuits and show that the local electrical potential and charge distribution are significantly changed when the device is exposed to organic dopants. We also demonstrate that SKPM experiments allow us to quantify the amount of charge transferred to the sensor during chemical doping, and to spatially resolve the active sites of the sensor where the doping process takes place.
机译:我们提出了一种扫描探针显微镜研究,对掺杂和感测的石墨烯氧化物(RGO)的纳米调传料进行掺杂和感测性能。 RGO器件是通过RGO血小板的介电器组装到交叉电极阵列上产生的,在SiO_2 / Si晶片顶部的光刻预先图案化。几种类型的氧官能团的可用性允许RGO与各种有机掺杂剂相互作用,包括甲醇,乙醇,丙酮和氨。我们在图案化的RGO电子电路上执行敏感扫描kelvin探针显微镜(SKPM)测量,并且当器件暴露于有机掺杂剂时,局部电位和电荷分布显着改变。我们还证明了SKPM实验允许我们量化化学掺杂期间传送到传感器的电荷量,并在空间地解析掺杂过程的传感器的活动位点。

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