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Deposition of CdSe films by pulsed galvanostatic electrodeposition and their properties

机译:通过脉冲镀锌电沉积和其性质沉积CDSE膜

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Cadmium Selenide (CdSe) thin films were pulse electrodeposited at room temperature and at different duty cycles in the range of 6 - 50 % at a current density of 100 mA cm~(-2). XRD patterns of films deposited at different duty cycles exhibit the cubic structure. The peak widths decreased with increase of duty cycle. The crystallite size increased from 8 to 20 nm. Microstructural parameters like dislocation density and strain were calculated. The transmission spectra exhibit interference fringes. Refractive index calculated by the envelope method varied in the range of 2.5 to 3.3.The optical band gap increased from 1.84 eV to 2.06 eV with increase of duty cycle.
机译:硒化镉(CDSE)薄膜在室温下是脉冲电沉积,并且在不同的占空比范围为100mA cm〜(-2)的电流密度。沉积在不同占空比下的薄膜的XRD图案表现出立方结构。随着占空比的增加,峰宽度降低。微晶尺寸从8到20nm增加。计算脱位密度和菌株等微结构参数。传输光谱表现出干涉条纹。通过包络方法计算的折射率在2.5至3.3的范围内变化。光带隙从1.84 EV增加到2.06eV,随着占空比的增加。

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