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Control of the Formation of Zn_(1-x)Mg_xO Films by Zinc Sulfate Concentration

机译:用硫酸锌浓度控制Zn_(1-x)Mg_xo膜的形成

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Magnesium doped ZnO films were electrochemically grown on the NESA conductive glass substrate from the magnesium nitrate aqueous solution with zinc sulfate, kept at 323K and the cathodic potential of-0.9V vs. Ag/AgCl. The Mg/(Mg+Zn) atomic ratio of Zn_(1-x)Mg_xO films increased with the decrease in the zinc sulfate concentration. The optical band gap energy of these Zn_(1-x)Mg_xO films decreased with increasing content of zinc sulfate. Thus, the optical band gap energy and Mg/(Mg+Zn) atomic ratio of Zn_(1-x)Mg_xO films would depend on the zinc sulfate concentration.
机译:在NESA导电玻璃基板上电化学生长掺杂镁ZnO薄膜从硫酸锌的硝酸镁水溶液,保持在323K和-0.9V与Ag / AgCl的阴极电位。 Zn_(1-x)Mg_XO膜的Mg /(Mg + Zn)原子比随着硫酸锌浓度的降低而增加。随着硫酸锌含量的增加,这些Zn_(1-x)Mg_XO膜的光带间隙能量降低。因此,Zn_(1-x)Mg_XO膜的光带间隙能量和Mg /(Mg + Zn)原子比将取决于硫酸锌浓度。

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