Multigate RADFET Dosimeter for Radioactive Environment Monitoring Applications

摘要

In this chapter, a new radiation sensitive FET (RADFET) dosimeter design (called the Dual-Dielectric Gate All Around DDGAA RADFET dosimeter) to improve the radiation sensitivity performance and its analytical analysis have been proposed, investigated and expected to improve the sensitivity behavior and fabrication process for RADFET dosimeter-based applications. Analytical models have been developed to predict and compare the performance of the proposed design and conventional (bulk) RADFET, where the comparison of device architectures shows that the proposed design exhibits a superior performance with respect to the conventional RADFET in term of fabrication process and sensitivity performances. The proposed design has linear radiation sensitivities of approximately 95.45 μV/Gy for wide irradiation dose range (from Dose = 50 Gy to Dose = 3000 Gy). Our results showed that the analytical analysis is in close agreement with the 2-D numerical simulation over a wide range of devices parameters. The proposed device and the Artificial Neural Networks (ANNs) have been used to study and show the impact of the proposed dosimeter on the environment monitoring and remote sensing applications. The obtained results make the DDGAA RADFET dosimeter a promising candidate for environment monitoring applications.