Adjustable switching voltage via sol-gel derived and Ag in-situ doped SiO_2 thin films for ReRAM

摘要

The sol-gel derived technique has been proposed not only to tailor the microstructure of resistive layer but to control the amount of metal during device fabrication for resistive random access memory (ReRAM). Using the sol-gel derived technique can modulate the solution ratio to adjust the resistance and operation voltage. In addition, various metal concentrations can be doped in sol-gel derived resistive layer to significantly improve switching properties including switching speed and power consumption. Above all, forming energy and morphology of metal filament can be ordered by the sol-gel derived technique, which is desirable for practical ReRAM applications.