Ⅲ-Ⅴ Compound Semiconductor Field Effect Transistors for Low Power Digital Logic

摘要

As traditional Silicon transistor scaling fast approaches its limits alternate channel materials are being actively researched to enable a new era of power constrained Very Large Scale Integrated (VLSI) circuit design. The outstanding transport properties of compound semiconductor Ⅲ-Ⅴ materials make them very attractive candidates to continue scaling into deep sub-micron technology nodes beyond 14nm. However several key challenges need to be addressed in order for these new materials to replace state of the art Strained Silicon, High-k metal gate or Silicon on Insulator (SOI) technologies. This paper discusses the key issues involved and recent research highlights in Ⅲ-Ⅴ MOSFETs motivating their viability for future low power CMOS technology.