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Tunneling Conductance in Correlated Graphenes

机译:相关石墨烯隧道电导

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摘要

Line shape of tunneling conductance observed for a correlated graphene is studied theoretically. We focus on the line shape of scanning tunneling spec-troscopy (STS) for a doped graphene flake. We obtain the STS line shape in terms of elastic tunneling of a Kondo singlet through the coherent tunneling levels that are formed due to two reservoirs within coherent regime. The resonant tunneling of a singlet through this coherent tunneling level causes the abrupt increase in tunneling conductance at a finite bias. The shifted position of Dirac point from the Fermi level is responsible for making the line shape of tunneling conductance asymmetric.
机译:从理论上研究了针对相关石墨烯观察到的隧穿电导的线形状。我们专注于扫描隧道透镜(STS)的扫描石墨烯片的线形状。我们在Kondo单线件的弹性隧穿通过连贯的隧道水平来获得STS线形状,该隧道水平由于两种储存器在连贯状态下的两个储存器而形成。单线件通过该相干隧道水平的谐振隧穿导致有限偏压下隧道电导的突然增加。来自费米水平的Dirac点的移位位置负责使隧道电导不对称的线形状。

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