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Tunneling diode, tunneling transistor, tunneling photodiode, and tunneling phototransistor with the structure of graphene-insulator-semiconductor
Tunneling diode, tunneling transistor, tunneling photodiode, and tunneling phototransistor with the structure of graphene-insulator-semiconductor
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机译:具有石墨烯-绝缘体-半导体结构的隧穿二极管,隧穿晶体管,隧穿光电二极管和隧穿光电晶体管
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摘要
A tunneling diode with a graphene-insulator-semiconductor structure according to the present invention includes a graphene layer, a non conductive layer which is stacked on the lower side of the graphene layer, a semiconductor layer which is stacked on the lower side of the non conductive layer, a first electrode which is formed on the graphene layer, and a second electrode which is formed on the semiconductor layer.
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