InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications

摘要

Ever since the invention of the tunnel diodes by Leo Esaki in 19571, they have been the subject of numerous studies as building blocks for ultra-low power electronics 2 and also as sub-cell connections in multi-junction solar cells.3 Tunneling field-effect transistors (TFETs) have attracted a lot of attention for ultra low-power electronic applications because of superior OFF-state performance.4 However, to date, TFETs suffer from poor-ON state currents which can be addressed by increasing the tunneling area and electric field. In this respect, radial nanowire heterostructures are attractive candidates for boosting the ON-state of T-FETs because the tunneling area is proportional to LchannelRNW. A core/shell geometry also enables the gate electric field to align with the internal junction field which may result in an improved SS.5