Highly reliable encapsulation films for OLEDs composed of SiN_x and SiO_xC_y prepared using SWP-CVD

摘要

We previously succeeded in developing a highly transparent, water impermeable SiN_x film for organic light-emitting displays using a surface-wave-plasma enhanced chemical vapor deposition system (SWP-CVD). In this report, we examine multilayer structures consisting of SiN_x layers and newly developed SiO_xC_y layers. The SiO_xC_y layer could be prepared at a high deposition rate of more than 40 nm/s by a plasma polymerization method using the same SWP-CVD reactor. The SiO_xC_y layer acts as both a defect decoupling layer and a particle buried layer. A highly reliable barrier performance was realized with the multilayer structure; in the acceleration test of 85°C and 85% relative humidity, the lifetime of the organic light emitting diode with thin-film encapsulation was more than 1,000 h.