首页> 外文会议>Surface Mount Technology Association International Conference >EVALUATION OF TIN WHISKER FORMATION ON SOT AND DISCRETE COMPONENTS ASSEMBLED WITH BISMUTH-CONTAINING LEAD-FREE SOLDER ALLOYS AFTER SHORT-TERM HIGH TEMPERATURE, HIGH HUMIDITY STORAGE
【24h】

EVALUATION OF TIN WHISKER FORMATION ON SOT AND DISCRETE COMPONENTS ASSEMBLED WITH BISMUTH-CONTAINING LEAD-FREE SOLDER ALLOYS AFTER SHORT-TERM HIGH TEMPERATURE, HIGH HUMIDITY STORAGE

机译:在短期高温下,用含铋无铅焊料合金组装的SOT和离散部件对锡晶晶肽形成的评价,高湿度储存

获取原文

摘要

With the introduction of environmental legislation such as the Restriction of Hazardous Substances (RoHS), lead (Pb)-free solder alloys have become more prominent. One issue that has emerged is that tin whiskers and initiate and grow under specific conditions, especially when the alloy thickness is less than approximately 50 to 75 microns. Whiskers are thin, highly conductive filaments which have the potential to grow and cause in-field failures in many applications. Most concerning with respect to tin whiskering are high reliability applications such as aerospace, automotive, and medical. Previously, we discussed whisker formation with bismuth (Bi)-bearing alloys on small outline transistor (SOT) and discrete components after long-term (8000 hours), ambient temperature, high humidity (25°C/85% RH) storage. Three alloys containing Bi, in addition to SAC305, were considered. Boards were assembled with electroless nickel immersion gold (ENIG) and immersion tin (ImmSn) finishes. Whisker density was generally higher on Bi-bearing alloys than SAC. Also, longer whiskers were observed on SAC than Bi-bearing alloys with ImmSn; the opposite was seen for ENIG. These differing results may be caused by variations in the stress state in the solder joint. In this paper, we evaluate whisker formation on SOT components (with Cu or Alloy 42 leads) and discrete components (with Ni plated terminations) after exposure to a high temperature, high humidity (85°C/85% RH) environment for 3000 hours. It was found that on SOT components, higher whisker densities were observed on ImmSn assemblies for SAC, while on Bi-bearing alloys, higher densities were observed on ENIG. For discrete components, higher densities were observed on ENIG for all alloys, however the difference in density between the two surface finishes increased as Bi in the alloy increased.
机译:随着环境法律的引入,如限制有害物质(RoHS),铅(Pb) - 免焊合金变得更加突出。出现的一个问题是锡须和在特定条件下发起和生长,特别是当合金厚度小于约50至75微米时。晶须是薄的,具有高度导电的细丝,具有潜力在许多应用中生长和导致现场失败。大多数关于锡炔锡是高可靠性应用,如航空航天,汽车和医疗。以前,我们讨论了在长期(8000小时),环境温度,高湿度(25°C / 85%RH)储存的小型晶体管(SOT)和离散组分上用铋(BI) - 布线合金和离散组分进行了讨论的晶须形成。考虑了含有Bi的三种合金,除SAC305之外,还被考虑。电路板与化学镀镍浸渍金(ENIG)和浸渍锡(Immsn)饰面组装。在Bi轴承合金的晶须密度通常比囊在囊泡上更高。此外,在囊上观察到较长的晶须而不是用Immsn的双轴承合金;相反的是emig。这些不同的结果可能是由焊点中应力状态的变化引起的。在本文中,我们在暴露于高温,高湿度(85℃/ 85%RH)环境3000小时后,评估SOT组分(用Cu或合金42引线)和离散组分(用Ni镀终端)(用Ni电镀终止)进行分立。发现,在SOT组件上,在囊的Immsn组件上观察到更高的晶须密度,而在双轴承合金上,在Enig上观察到更高的密度。对于离散组分,对所有合金的ENIG上观察到更高的密度,但是在合金中的BI中增加了两个表面处理之间的密度差异增加。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号