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A Comparative Study of Semiconducting Behavior of Passive film of High Nitrogen and Ni and Mn free Stainless Steels in 3.5 wt. NaCl

机译:3.5重量%中高氮气和Mn游离不锈钢无源膜的半导体行为的比较研究。 %NaCl.

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The semiconducting property of passive films formed on Alloy 1 (18Cr-2Mo-lN), Alloy 2 (17.5Cr-3Mo-0.5N) and Alloy 3 (Type 316 SS) were studied by using the Mott-Schottky (M-S) approach in 3.5 wt. % NaCl solution of pH 2, 7 and 12. The M-S analysis shows that the film acts as n-type and p-type semiconductors across the potential range. The donor density of Alloy 1 has been found to be lower by about 31 %, 11 % and 6 % as compared to that of Alloy 2 at pH 2, 7 and 12 respectively. However, Alloy 3 has higher donor density 44 %, 27 % and 30 % in comparison with Alloy 1. The donor density of Alloy 3 found to be greater about 21 %, 18 % and 25 % to the Alloy 2 at pH 2, 7 and 12 respectively .These results indicate that the sensitivity of electrolyte composition and the presence of alloying elements like nitrogen and nickel on the donor density of passive film. High nitrogen stainless steels exhibited a lower donor density that corresponds to good protectiveness, more stable passive film which is in agreement with a low passive current density (ipass), higher pitting potential (E_(pit)) and polarization resistance (R_p).
机译:通过使用Mott-Schottky(MS)方法研究了在合金1(18Cr-2MO-LN),合金2(17.5Cr-3mO-0.5N)和合金3(316型SS)中形成的无源膜的半导体特性3.5 wt。 pH 2,7和12的%NaCl溶液。M-S分析表明,膜在电位范围内用作n型和p型半导体。与PH 2,7和12的合金2相比,已发现合金1的供体密度为较低约31%,11%和6%。然而,与合金1相比,合金3具有较高的供体密度44%,27%和30%。在pH 2,7的合金2中发现的合金3的供体密度为较大约21%,18%和25%和12分别。这些结果表明电解质组合物的敏感性以及氮气和镍等合金元素的存在对无源膜的供体密度。高氮不锈钢呈较低的供体密度对应于良好的防护性,更稳定的无源膜,这与低无源电流密度(IPASS),较高的蚀电位(E_(坑))和偏振电阻(R_P)一致。

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