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Comparative Molecular Dynamics Simulation Study of Mechanical Properties of Carbon Nanotubes With Number of Stone-Wales and Vacancy Defects

机译:碳纳米管力学性能的比较分子动力学模拟研究,石威尔士数量和空位缺陷

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Carbon nanotubes (CNTs) having pristine structure (i.e. structure without any defect) have very high mechanical properties. However, CNTs suffer from defects which can appear during purification, production or deliberately introduced by chemical treatment. The present study is based on comparative investigation of effects produced by Stone-Wales (S-W) and vacancy defects (VD) on the mechanical performance of single walled carbon nanotubes (SWCNT). The defects have been varied from 1 to 4 in both VD and S-W. In order to investigate the effect of both the defects on the material properties of CNT, molecular dynamics (MD) simulations have been used. In this study, a series of MD models (inclusion of number of S-W and VD) have been built to simulate the effects of defects on the mechanical performance of SWCNTs. MD simulation has been carried out on a 42.59A long armchair (6, 6) and (10, 10) SWCNTs by varying relative positions and orientations. Results show that the defects have reduced the tensile strength and strain more in VD as compare to S-W. This has been reduced by an average value of 23.48% and 28.2% respectively for 4 vacancy defects (4VD). Simulation results also show that more energy is required to stabilize the structure which comprises of VD. The increase in the energy value on an average is 35.52% for 4 VD as compared to pristine CNT. The Young's modulus of defected CNTs has also been calculated by increasing the lattice size in the successive increments of 25% by volume and it has been found that the Young's modulus of pristine CNT is weakened by 9.38% for S-W defects.
机译:具有原始结构的碳纳米管(CNT)(即没有任何缺陷的结构)具有非常高的机械性能。然而,CNT患有在净化,生产或故意通过化学处理期间出现的缺陷。本研究基于石威尔士(S-W)和空位缺陷(VD)对单壁碳纳米管(SWCNT)的机械性能产生的对比调查。在VD和S-W中,缺陷在1到4中变化。为了研究缺陷对CNT的材料特性的影响,已经使用了分子动力学(MD)模拟。在本研究中,已经建立了一系列MD模型(包含S-W和VD的数量)以模拟缺陷对SWCNT的机械性能的影响。 MD模拟已经通过不同的相对位置和方向在42.59A长扶手椅(6,6)和(10,10)SWCN上进行。结果表明,与S-W相比,缺陷会降低抗拉强度和压力更多。对于4个空位缺陷(4VD),这分别降低了平均值23.48%和28.2%。仿真结果还表明,需要更多的能量来稳定包括VD的结构。与原始CNT相比,平均能量值的增加为4 VD,相比,4 VD的增加为35.52%。通过将晶格尺寸的连续增量增加了25%(体积)的晶格大小,还已经计算了缺陷的CNT的模量,并且已经发现杨氏度CNT的杨氏模量削弱了S-W缺陷的9.38%。

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