首页> 外文会议>International symposium on semiconductor cleaning science and technology >Inhibition of Copper Corrosion by Removal of H_2O_ 2 from CO_2-Dissolved Water Using Palladium Catalysts
【24h】

Inhibition of Copper Corrosion by Removal of H_2O_ 2 from CO_2-Dissolved Water Using Palladium Catalysts

机译:通过使用钯催化剂从CO_2溶解的水中除去H_2O_2来抑制铜腐蚀

获取原文

摘要

We have found that the dissolution rate of a copper metal film which is easy to be corroded oxidatively in CO_2-dissolved water (CO_2 DIW) used as rinse water for wafer cleaning processes can be decreased to one-third by removal of H_2O_2 from CO_2 DIW. DIW in semiconductor factories normally contains 10-40 μg/L H_2O_2, which remains also in CO_2 DIW. We have developed a palladium-loaded monolithic anion exchange resin (Pd-M) as a catalyst that is able to remove H_2O_2 in DIW down to below 1 μg/L at an extreamly high flow rate (space velocity SV = 6000 h~(-1)), with no detectable elution of impurities.
机译:我们已经发现,在CO_2溶解的水(CO_2ID)中易于氧化的铜金属膜的溶出速率可以通过从CO_2 DIW移除H_2O_2来减少至三分之一的三分之一。 DIW在半导体工厂通常含有10-40μg/ L H_2O_2,其仍然在CO_2 DIW中。我们开发了一种钯加载的整体式阴离子交换树脂(PD-M),作为催化剂,其能够以引流的高流速(空间速度Sv = 6000h〜( - )以漏极高达1μg/ L的H_2O_2。( - 1)),没有可检测的杂质洗脱。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号