首页> 外文会议>International symposium on semiconductor cleaning science and technology;Meeting of the Electrochemical Society >Inhibition of Copper Corrosion by Removal of H_2O_ 2 from CO_2-Dissolved Water Using Palladium Catalysts
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Inhibition of Copper Corrosion by Removal of H_2O_ 2 from CO_2-Dissolved Water Using Palladium Catalysts

机译:钯催化剂去除CO_2溶解水中的H_2O_2抑制铜腐蚀

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We have found that the dissolution rate of a copper metal film which is easy to be corroded oxidatively in CO_2-dissolved water (CO_2 DIW) used as rinse water for wafer cleaning processes can be decreased to one-third by removal of H_2O_2 from CO_2 DIW. DIW in semiconductor factories normally contains 10-40 μg/L H_2O_2, which remains also in CO_2 DIW. We have developed a palladium-loaded monolithic anion exchange resin (Pd-M) as a catalyst that is able to remove H_2O_2 in DIW down to below 1 μg/L at an extreamly high flow rate (space velocity SV = 6000 h~(-1)), with no detectable elution of impurities.
机译:我们发现,通过从CO_2 DIW中去除H_2O_2,可以很容易地氧化铜金属膜在用作晶片清洗工艺的漂洗水中的CO_2溶解水(CO_2 DIW)中被氧化腐蚀的溶解速率降低到三分之一。 。半导体工厂中的DIW通常包含10-40μg/ L H_2O_2,而CO_2 DIW中也保留有H_2O_2。我们已经开发了钯负载的整体式阴离子交换树脂(Pd-M)作为催化剂,该催化剂能够以极高的流速(空速SV = 6000 h〜(-)将DIW中的H_2O_2去除至1μg/ L以下。 1)),没有可检测到的杂质洗脱。

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