Modified cone shapes on patterned sapphire substrates for high performance InGaN LED applications

摘要

In this study, GaN-based light emitting diodes (LEDs) were prepared on the cone-shaped patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. To improve the epilayer quality and device performance of LEDs, the PSSs were further wet etched to form the modified top-tip cone shapes. With increasing the wet etching time to 3 min, the LED grown on the cone-shaped PSS has 53% and 8% enhancement in light output (@ 20 mA) as compared with that on conventional sapphire substrate (CSS) and the cone-shaped PSS without wet etching, respectively.