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Effect of Ar Pressure on Properties of Polycrystalline CdZnTe Films

机译:Ar压力对多晶Cdznte薄膜性能的影响

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Polycrystalline CdZnTe (CZT) films were grown by close-spaced sublimation method. The CdZnTe films were prepared on fluorine doped tin oxide (FTO) glass substrates at various argon (Ar) pressures from 200 Pa to 700 Pa. A comparative study of the films at different pressures was obtained by X-ray diffraction (XRD), scanning electron microscope (SEM) and Energy dispersive spectrometer (EDS) respectively. The XRD studies revealed that CdZnTe films had a preferential orientation along the (111) phase except the one at 500 pa. EDS analysis indicated that the increasing of Ar pressure decreased Zn content.
机译:通过近距离间隔的升华方法生长多晶Cdznte(CZT)膜。在200Pa至700Pa的各种氩(AR)压力下在各种氩(AR)压力下在氟掺杂氧化锡(FTO)玻璃基板上制备Cdznte薄膜。通过X射线衍射(XRD),扫描地获得不同压力下薄膜的对比研究电子显微镜(SEM)和能量分散光谱仪(EDS)。 XRD研究表明,除了500Pa的一个,Cdznte膜的优先取向沿(111)相。 EDS分析表明Ar压力的增加降低了Zn含量。

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