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ZnO-Bi2O3-based varistor ceramics prepared by direct high-energy ball milling of the dopants

机译:ZnO-Bi 2 O 3 基于掺杂剂的高能球磨制备的压敏电阻陶瓷

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摘要

The microstructure and electrical properties of ZnO-Bi2O3-based varistor ceramics prepared by direct high-energy ball milling of the dopants were studied. The varistor ceramics samples were characterized by XRD and SEM analysis, as well as by dc electrical measurements, such as the nonlinearity coefficients, leakage current and threshold voltage. The best electrical characteristics were found in sample P2, which exhibited the threshold voltage was 347 V/mm, nonlinear coefficient was 39.2 and leakage current was 0.18 μA.
机译:ZnO-Bi 2 O 3 / ING>基于掺杂剂的直接高能球磨制备的压敏电阻陶瓷的微观结构和电性能。压敏电阻陶瓷样品的特征在于XRD和SEM分析,以及DC电测量,例如非线性系数,漏电流和阈值电压。在样品P2中发现的最佳电特性,其表现出阈值电压为347V / mm,非线性系数为39.2,漏电流为0.18μA。

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