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Density-controlled growth of well-aligned ZnO nanowires using Hydrothermal method

机译:利用水热法,密度控制的ZnO纳米线的密度控制生长

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This study is mainly to control the density of zinc oxide nanowires arrays as main axis. We spin coated AZO thin film to Si/SiO_2 substrate by hydrothermal method growing ZnO nanowire arrays on a substrate by spin coating a layer of zinc powder mixed with SiO_2 film, and controlled the concentration of zinc. We can easily obtain a nanowire array density control. In this experiment, we investigated different centrifugation speed, time, zinc concentration, temperature and other variable parameters. Through field emission scanning electron microscopy observation of dispersive zinc oxide nanowires and dispersion situation, it was found that using different doping concentration and rotation speed, different densities can be successfully obtained for ZnO nanowires array. Dispersion of zinc oxide nanowires by hydrothermal method with increasing time, the diameter and length will increase significantly.
机译:该研究主要是控制氧化锌纳米线阵列的密度作为主轴。通过旋涂与SiO_2膜混合的锌粉层,通过水热法将ZnO纳米线阵列生长ZnO纳米线阵列的水热法生长ZnO纳米线阵列,并控制锌的浓度。我们可以轻松获得纳米线阵列密度控制。在该实验中,我们研究了不同的离心速度,时间,锌浓度,温度和其他可变参数。通过场发射扫描电子显微镜观察色散氧化锌纳米线和分散情况,发现使用不同的掺杂浓度和转速,可以成功地获得不同的密度,用于ZnO纳米线阵列。氧化锌纳米线的分散通过水热法随着时间的增加,直径和长度将显着增加。

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