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首页> 外文期刊>Journal of Semiconductors >Controlled growth of well-aligned ZnO nanowire arrays using the improved hydrothermal method
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Controlled growth of well-aligned ZnO nanowire arrays using the improved hydrothermal method

机译:使用改进的水热法控制排列良好的ZnO纳米线阵列的生长

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摘要

Well-aligned ZnO nanowires were hydrothermally synthesized based on a facile method for preparing the ZnO seed layer which was derived from the combination of a sol - gel process and the spin-coating technique. The effect of the contents of growth solution and the growth duration on the morphology of ZnO nanowires has been investigated. The results indicated that long and vertically aligned ZnO nanowires could be obtained by adjusting the contents of ammonia and polyethyleneimine (PEI) in the growth solution. Under the optimized condition, the length of ZnO nanowires increased fast and almost linearly with the growth duration. After 10 h incubation, ZnO nanowires more than 25 μm in length were obtained. By combining the conventional photolithographic method with this hydrothermal approach, long and well-aligned ZnO nanowire arrays were selectively grown on the substrate. In addition, the bottom fusion at the foot of the nanowires has been obviously improved. The results demonstrated that the improved hydrothermal process is favorable to synthesize long and well-aligned ZnO nanowires, and possesses good process compatibility with the conventional photolithographic technique for preparing ZnO nanowire arrays. So it has great potential in applications such as display and field emission devices.
机译:基于一种简便的制备ZnO种子层的方法,通过水热法合成了取向良好的ZnO纳米线,该方法是通过溶胶-凝胶法和旋涂技术相结合而得到的。研究了生长溶液的含量和生长持续时间对ZnO纳米线形貌的影响。结果表明,通过调节生长溶液中氨和聚乙烯亚胺(PEI)的含量,可以获得长且垂直排列的ZnO纳米线。在优化的条件下,ZnO纳米线的长度快速增加,并且几乎随生长时间线性增长。温育10小时后,获得了长度大于25μm的ZnO纳米线。通过将传统的光刻方法与这种水热方法相结合,可以在衬底上选择性地生长长且排列良好的ZnO纳米线阵列。此外,纳米线底部的底部融合得到了明显改善。结果表明,改进的水热法有利于合成长且取向良好的ZnO纳米线,与常规光刻技术制备ZnO纳米线阵列具有良好的工艺相容性。因此,它在显示和场发射设备等应用中具有巨大的潜力。

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