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Microstructure Modeling for Prediction of Thermal Conductivity of Plain Weave C/SiC Composites Considering Manufacturing Flaws

机译:考虑制造缺陷的普通编织C / SIC复合材料热导率的微观结构建模

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Utilized photomicrographs taken by scanning electron microscope (SEM), an accurate representative volume element (RVE) model for plain weave C/SiC composites is established. Based on the steady-analysis method, the in-plane and thickness direction thermal conductivity of the C/SiC composites are calculated as 25.6Wm~(-1)K~(-1) and 12.1Wm~(-1)K~(-1), respectively. The manufacturing flaws have different effect on thermal conductivity. Compared with RVE without flaws, the result shows that matrix cracks make thermal conductivity decrease by 7.2% in the in-plane direction and have little effect in the thickness direction; matrix porosities have a significant effect on thermal conductivity, which make the thermal conductivity decrease by 16.7% in the in-plane direction and decrease by 25.4% in the thickness direction. The variation law of thermal conductivity along with porosity volume is also observed: as matrix porosity volume fraction is increasing, the thermal conductivity of material shows significant decrease.
机译:利用扫描电子显微镜(SEM)采用的显微照片,建立了普通编织C / SIC复合材料的精确代表体元素(RVE)模型。基于稳态分析方法,C / SiC复合材料的平面和厚度导热率计算为25.6WM〜(-1)k〜(-1)和12.1WM〜(-1)k〜( -1)分别。制造缺陷对导热率不同。与无瑕疵的RVE相比,结果表明,基质裂缝在面内方向上使导热率降低7.2%,厚度方向几乎没有效果;基质孔隙率对导热率具有显着影响,导热率在面内方向上使导热率降低16.7%,并且在厚度方向上减小25.4%。还观察到导热率和孔隙率体积的变化定律:由于基质孔隙率体积分数增加,材料的导热率显示出显着降低。

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