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First-principles study of thin-film properties of transition-metal oxide SrTcO_3

机译:过渡金属氧化物SRTCO_3薄膜特性研究的第一原理研究

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The structural and electronic properties of fully-relaxed thin-film SrTcO_3 are investigated using first-principles method. In contrast to the insulating property of the bulk SrTcO_3, the thin-film SrTcO_3 with a thickness of 8.06 A is found to be nearly metallic with a very small band gap of 0.17 eV. Its band structure meets the demands of being thermoelectric material. Moreover, thin-film SrTcO_3 is found to retain its bulk high magnetic ordering temperature (T_N) property, which suggests that it is applicable in high ambient temperatures. Comparison of the electronic/magnetic property of thin-film and bulk SrTcO_3 is performed to explore the origins of their different electrical properties.
机译:使用一原子方法研究了全弛豫薄膜SRTCO_3的结构和电子性质。与散装SRTCO_3的绝缘性相比,厚度为8.06A的薄膜SRTCO_3是几乎金属的,具有0.17eV的非常小的带隙。它的频带结构满足热电材料的需求。此外,发现薄膜SRTCO_3保留其散装高磁性有序温度(T_N)性能,这表明它适用于高环境温度。进行薄膜和散装SRTCO_3的电子/磁性的比较来探讨其不同电气性质的起源。

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