首页> 外文会议> >In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper)

【24h】

In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper)

机译：半导体技术的原位和异位椭偏表征（特邀论文）

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Abstract: Abstract not available. !21

机译：摘要：摘要不可用。！21

著录项

来源
《》|1992年|p.246-257|共12页
会议地点 Somerset NJ(US)
作者
John A. Woollam; Univ. of Nebraska/Lincoln; Lincoln; NE; USA; Paul G. Snyder; Univ. of Nebraska/Lincoln; Lincoln; NE; USA; Huade Yao; Univ. of Nebraska/Lincoln; Lincoln; NE; USA; Blaine D. Johs; J.A. Woollam Co.; Lincoln; NE; USA.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Invited Talk on Materials for Spintronics: Implementation of a Molecular Beam Epitaxial Growth System for Ex-Situ Magnetoelastic Studies of Fe Ultrathin Films on GaAs Semiconductors [J] . I. G. Will, Y. B. Xu Quantum Matter . 2014,第4期

机译：自旋电子学材料的受邀演讲：用于GaAs半导体上Fe超薄膜的异位磁弹性研究的分子束外延生长系统的实现
2. EX-SITU AND IN-SITU CHARACTERIZATIONS OF THE LI REMOVAL FROM THE ANTIFLUORITE Li_5FeO_4 [J] . Chun Zhan, Jun Lu, Khalil Amine American Chemical Society, Division of Fuel Chemistry, Preprints . 2015,第2cd期

机译：从软沸石Li_5FeO_4去除Li的异位和原位表征
3. Fixation of CO_2 by chrysotile in low-pressure dry and moist carbonation: Ex-situ and in-situ characterizations [J] . Larachi F., Daldoul I., Beaudoin G. Geochimica et Cosmochimica Acta: Journal of the Geochemical Society and the Meteoritical Society . 2010,第11期

机译：在低温干，湿碳酸中温石棉固定CO_2：异位和原位表征
4. In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper) [C] . John A. Woollam, Paul G. Snyder, Huade Yao, Conference on spectroscopic characterization techniques for semiconductor technology . 1992

机译：用于半导体技术的原位和前地椭圆形表征（邀请纸）
5. In-situ surface, chemical, electrical characterization of the interfaces between ferromagnetic metals and compound semiconductors grown by molecular beam epitaxy. [D] . Schultz, Brian Douglas. 2005

机译：铁磁金属与分子束外延生长的化合物半导体之间的界面的原位表面，化学，电学表征。
6. In-Situ and Ex-Situ Characterization of Femtosecond Laser-Induced Ablation on As2S3 Chalcogenide Glasses and Advanced Grating Structures Fabrication [O] . Hongyang Wang, Dongfeng Qi, Xiaohan Yu, 2019

机译：飞秒激光诱导的As2S3硫族化物玻璃上的烧蚀原位和异位表征以及先进的光栅结构制造
7. In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation [O] . Yaccuzzi E., Barrigón Montañés Enrique, Rodríguez Sebastián, 2013

机译：10 MEV质子辐照下III-V半导体材料和太阳能电池的原位和异位表征
8. Ex-situ and In-situ Ellipsometric Studies of the Thermal Oxide on InP. [R] . Liu, X., Andrews, J. W., Irene, E. A. 1990

机译：Inp上热氧化物的非原位和原位椭偏研究。

In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper)

摘要

著录项

相似文献

相关主题

期刊订阅