Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO_2/Si(100) Interface

摘要

The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on both sides of the SiO_2/Si(100) interface covered with more than one SiO_2 monolayer, which is device grade, were measured with the probing depth of nearly 2 nrn. The novel analytical procedure of these spectra is developed by considering that one SiO_2 monolayer, two compositional transition layers (CTLs), and one Si monolayer on Si substrate surface are continuously connected with each other. It was found for the interface formed in dry O_2 at 900 °C that two CTLs constitute the first and second CTLs. The first CTL formed at the interface consists mainly of Si~(1+), Si~(2+), and Si~0 and the second CTL formed on the first CTL consists mainly of Si~(3+) and Si~(4+). Influences of oxidation temperature, annealing in forming gas on the chemical structures of transition layers formed on both sides of the interface are also discussed.