首页> 外文会议>International Conference on Electron Microscopy >Effect of Silicon Additions in CrSi (10, 20, 30, 40 at. Si) Magnetron Targets on Microstructure of Reactively Deposited (Cr,Si)N Coatings
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Effect of Silicon Additions in CrSi (10, 20, 30, 40 at. Si) Magnetron Targets on Microstructure of Reactively Deposited (Cr,Si)N Coatings

机译:硅添加在CRSI(10,20,30,40at)中的磁共振磁控靶对反应沉积(Cr,Si)N涂层的微观结构靶向

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The CrSi compacts containing 10, 20, 30 and 40 at.% Si sintered from mixed elemental powders were used as targets for reactively deposited magnetron (Cr,Si)N coatings. The silicon substrates were kept either at ambient temperature or heated up to 600°C. The microstructure observations were performed using TECNAI FEG (200 kV) with EDAX X-ray Energy Dispersive Spectroscopy (EDS) system and JEOL 3010 (300 kV) with Gatan Energy Filtering (GIF) attachment microscopes. The thin foils were cut using QUANTA Focused Ion Beam (FIB) system. The performed investigations proved that increasing silicon content in coatings deposited at 600°C using CrSi10, CrSi20 and CrSi30 targets caused a refining of their fully crystalline CrN-type columnar microstructure from ~ 40 to ~ 35 and ~ 25 nm. The deposition performed from the same targets, but at ambient temperatures, i.e. without resistive heating of the substrates, produced coatings of mixed crystalline-amorphous type. They were characterized by gradient microstructure with amorphous material prevailing close to the substrate, but vanishing higher up. The rising of silicon content in the targets resulted in decreasing amount of crystalline phase. The coatings obtained from Cr40Si target were fully amorphous independently of substrate temperature during deposition. The measurements of local chemical compositions obtained using EDS technique indicated that the Cr:Si ratio in the coatings roughly reproduced that present in the targets used for their deposition. Additionally, these measurements indicated that all coatings are contaminated with oxygen. The mapping of chemical composition using GIF technique of mixed crystalline-amorphous coatings proved that they are enriched in Cr and Si, respectively. The present results showed, that relying on single CrSi target magnetron sputtering the crystalline-amorphous nanocomposite could be obtain at silicon additions from 10 to 30 at %, being well above were that type of microstructure is formed during deposition using double target magnetron systems. Additionally, for the first time, the measurements helped to prove that the crystallites and amorphous material are enriched in chromium and silicon respectively, i.e. confirmed presence of CrN/Si_3N_4 composite.
机译:含有10,20,30和40的CRSI块。从混合元素粉末烧结的%Si用作反应性沉积磁控管(Cr,Si)N涂层的靶标。将硅基衬底保持在环境温度下或加热至600℃。使用Tecnai Feg(200kV)与eDAX X射线能量分散谱(EDS)系统和JEOL 3010(300kV)进行微观结构观察,用GataN能量滤波(GIF)附着显微镜。使用量子聚焦离子束(FIB)系统切割薄箔。进行的进行的研究证明,使用CRSI10,CRSI20和CRSI30靶沉积在600℃,CRSI20和CRSI30靶向沉积在600℃的涂层中的硅含量从〜40至〜35和〜25nm的完全结晶CRN型柱状微观结构精炼。从相同的靶进行,但在环境温度下,即没有电阻加热基板的电阻,产生的混合结晶 - 无定形类型的涂层。它们的特征在于梯度微观结构,其具有靠近基材的无定形材料,但升高。靶中硅含量的上升导致结晶相的含量降低。在沉积期间,从CR40SI靶标的涂层完全无定形,独立于衬底温度。使用EDS技术获得的局部化学组合物的测量表明,涂层中的CR:Si比大致转再现出用于它们沉积的靶标。另外,这些测量表明所有涂层被氧气污染。使用混合结晶 - 无定形涂层GIF技术的化学成分的测绘证明了它们分别富含Cr和Si。目前的结果表明,依赖于单个CRSI靶磁控管溅射结晶 - 无定形纳米复合材料,在10至30at以%的硅加入,高于良好的是使用双靶磁控系统在沉积期间形成的微观结构。另外,首次,测量有助于证明微晶和无定形材料分别富含铬和硅,即确认存在CrN / Si_3N_4复合材料。

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