Ni-based ohmic contacts to silicon carbide examined by electron microscopy

摘要

Ni/Si multilayer contact structures to 4H-SiC after subsequent annealing steps were investigated with electron microscopy methods. After high temperature annealing step, specific defects in the contact structures were observed. The influence of phase transformations during annealings on the morphology of the contacts was discussed and the explanation of formation mechanism of voids within the contact layer was proposed.