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Surface State Effects on the Thermopower of 30- to 200-nm Diameter Bismuth Nanowires

机译:表面状态对直径30至200nm直径型纳米线的恒温器的影响

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Nanostructured composites and nanowire arrays of traditional thermoelectrics like Bi, Bi_(1-x)Sb_x and Bi_2Te_3 have metallic Rashba surface spin-orbit bands featuring high mobilities rivaling that of the bulk, for which topological insulator behavior has been proposed. Nearly pure surface electronic transport has been observed at low temperatures in Bi nanowires with diameter around the critical diameter, 50 nm, for the semimetal-to semiconductor transition. The surface contributes strongly to the thermopower, actually dominating for temperatures T < 100 K in these nanowires. The surface thermopower was found to be -1 T μV/K~2, a value that is consistent with theory. We show that surface electronic transport together with boundary phonon scattering leads to enhanced thermoelectric performance at low temperatures of Bi nanowire arrays. We compare with bulk n-BiSb alloys, optimized CsBi_4Te_6 and optimized Bi_2Te_3. Surface dominated electronic transport can be expected in nanomaterials of the other traditional thermoelectrics.
机译:纳米结构复合材料和传统热电子的纳米线阵列如Bi,Bi_(1-x)Sb_x和Bi_2te_3具有金属RASHBA表面旋转轨道轨道,其具有群体的高摩托地,已经提出了拓扑绝缘体行为。在临界直径围绕临界直径的尺寸围绕临界直径,50nm的低温下观察到几乎纯的表面电子传输,用于半导体转变。表面对热电机有贡献,实际上在这些纳米线中的温度T <100K的温度占主导地位。发现表面散热器为-1TμV/ k〜2,是与理论一致的值。我们展示了与边界声子散射一起的表面电子传输,以提高Bi纳米线阵列的低温下的热电性能。我们与批量N-BISB合金进行比较,优化CSBI_4TE_6和优化的BI_2TE_3。在其他传统热电梁的纳米材料中可以预期表面占据的电子传输。

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