Effect of Strain on the Band Offsets of III-V Quantum Wells: In_xGa_(1-x)P/GaAs, In_xGa_(1-x)As/ Al_(0.2)Ga_(0.8)As and In_xGa_(1-x)N/GaN

摘要

Advantageous changes in the optoelectronic properties of strained III-V compound semiconductor quantum wells (QWs) have made them important. In this paper we report the results of our experimental and theoretical studies on, how the important parameter, band offset, changes with strain for In_xGa_(1-x)P/GaAs, In_xGa_(1-X)As/Al_(0.2)Ga_(0.8)As and In_xGa_(1-x)N/GaN QWs.