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Electronic Structure and Thermoelectric Property of Misfit Layered Cobaltite and Doped Series

机译:错配分层钴罐和掺杂系列的电子结构和热电性能

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The relations between electronic structure, chemical bond and thermoelectric property of misfit layered cobaltite of Ca_3Co_4O_9 and 3d transitional metal (Ti, Cr, Mn, Fe and Cu) doped series are studied using density function and discrete variation method (DET-DVM). Ca_3Co_4O_9 consists of two layers of CoO_2 and Ca_2CoO_3- The highest valence band (HVB) and the lowest conduction band (LCB) near Fermi level are only mainly from O 2p and Co 3d in Ca_2CoO_3 layer. Therefore, the semiconductor, or thermoelectric property of Ca_3Co_4O_9 should be mainly from Ca_2CoO_3 layer, but it seems to have no direct relation to the CoO_2 layer, which is consistent with that binary oxides hardly have thermoelectric property, but trinary oxide compounds have quite good thermoelectric property. The variation of electronic structure, chemical bond strength and thermoelectric property of doping series is discussed. The improvement of thermoelectric property of Cu-doped Ca_3Co_4O_9 is the most obvious.
机译:使用密度函数和离散变化法(DET-DVM)研究了CA_3CO_4O_9和3D过渡金属(TI,CR,MN,Fe和Cu)掺杂系列的MISFIT层状钴罐的电子结构,化学键和热电性的关系。 CA_3CO_4O_9由两层COO_2和CA_2COO_3-是FERMI级附近的最高价带(HVB)和最低导通带(LCB)仅来自CA_2COO_3层中的O 2P和CO 3D。因此,CA_3CO_4O_9的半导体或热电性应主要来自CA_2COO_3层,但似乎与COO_2层没有直接关系,其与二元氧化物几乎没有热电性,但氧化物化合物具有相当良好的热电学财产。讨论了掺杂系列的电子结构,化学粘合强度和热电性的变化。 Cu-掺杂CA_3CO_4O_9的热电性质的改善是最明显的。

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