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Growth of Double-Side Tl-2212 Thin Film on CeO_2-Buffered MgO Substrate

机译:CEO_2缓冲MgO衬底上双面TL-2212薄膜的生长

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The double-side Tl-2212 films were fabricated on CeO_2-buffered MgO substrates by dc magnetron sputtering and post-annealing method. The RF magnetron sputtering technology was used to grow CeO_2 buffer layers. XRD and SEM measurements showed that the CeO_2 films on annealed MgO substrates were highly c-axis orientation, and the Tl-2212 superconducting films on both sides had similar morphology and crystalline structure. For both sides of Tl-2212 films, the critical transition temperatures (T_c) were above 106 K, and the critical current densities (J_c) were above 2.2 MA/cm~2 (77 K, 0 T).
机译:通过DC磁控溅射和后退火方法在CEO_2缓冲MgO基板上制造双面TL-2212薄膜。 RF磁控溅射技术用于生长CEO_2缓冲层。 XRD和SEM测量结果表明,退火MgO基板上的CEO_2膜具有高度C轴取向,并且两侧的TL-2212超导膜具有相似的形态和晶体结构。对于TL-2212薄膜的两侧,关键转变温度(T_C)高于106k,临界电流密度(J_C)高于2.2mA / cm〜2(77k,0 T)。

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