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Finite Element Simulation of 2D-based Materials as Heat Spreaders

机译:2D基材料的有限元模拟作为散热器

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Since the discovery of graphene, the first discovered 2D material, by Novoselov and Geim in 2004, the field of 2D materials has taken off and about 20 further 2D materials have been found. One of the most promising of these materials for the passive cooling of chips is hBN. HBN has the very unusual combination of being electrically insulating and thermally conductive, which potentially makes it an ideal material for both laterally spreading heat and passivating hotspots on chips. This gives hBN an advantage over graphene, where the chip requires a SiO_2 passivation layer to prevent short circuits. To help evaluate the performance of these heat spreading films, a finite element model has been devised to support the experimental work undertaken in various publications. This model has been validated with experimental data and suggests that both graphene- and hBN-based materials have significant potential in lateral heat spreading applications.
机译:由于石墨烯的发现,首次发现的2D材料,由Novoselov和Geim在2004年,已经发现了2D材料的领域,并且已经发现了约20种另外的2D材料。这些材料最有希望的芯片被动冷却的材料是HBN。 HBN具有电绝缘和导热性的非常不寻常的组合,其可能使其成为横向扩散热量和芯片上钝化热点的理想材料。这为HBN提供了在Graphene上的优势,其中芯片需要SiO_2钝化层以防止短路。为了帮助评估这些散热薄膜的性能,已经设计了有限元模型,以支持各种出版物中进行的实验工作。该模型已被实验数据验证,并表明石墨烯和HBN基材料在横向散热应用中具有显着的潜力。

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