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Optimization and monitoring of bevel removal process

机译:优化和监测斜面清除过程

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• Inspecting the wafer edge issue: Wafer bevel inspection can help us to find out the root cause of yield loss from wafer edge or partial die. • Monitoring EBR/ 193 lithography performance : From the EBR monitoring results, bevel inspection find out the top EBR recipe setting is not good, and it also demonstrates the EBR performance with different bevel rinse RPM setting, it can help us to find out the optimum recipe. • Qualifying the various wafer types/sources: All condition coated in CZ wafer type show much better coating performance than that of in EPI wafer type due to CZ wafers have better wafer edge profile. Wafer edge profile vs. bevel inspection help us to improve the lithography and EBR setting with various wafer sources. • Monitoring the bevel etching performance: The bevel inspection after POLY line etch, without bevel etching process will have peeling concern from wafer edge to wafer interior area in the subsequent processes due to the under-cut defects.
机译:•检查晶圆边缘问题:晶圆斜面检验可以帮助我们找出晶圆边缘或部分模具的产量损失的根本原因。 •监控EBR / 193光刻性能:从EBR监测结果中,斜面检测发现顶端EBR配方设置不好,它还展示了不同斜面冲洗RPM设置的EBR性能,它可以帮助我们找出最佳食谱。 •限定各种晶圆类型/源:Cz晶片类型中涂覆的所有条件显示出比CZ晶片更好的晶片边缘轮廓的更好的涂层性能,而不是EPI晶片类型。晶圆边缘轮廓与斜面检测有助于我们改进具有各种晶片源的光刻和EBR设置。 •监测斜面蚀刻性能:多孔蚀刻后的斜面检查,没有斜面蚀刻工艺将在随后的工艺中从晶片边缘到晶片内部区域的剥离问题,这是由于欠切割的缺陷。

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