Effect of annealing temperature on resistance switching behavior of Bi_4Ti_3O_(12) thin films deposited on ITO glass

摘要

Nonvolatile of polycrystalline Bi_4Ti_3O_(12) thin films prepared by sol-gel method were studied, and the effect of annealing temperature on resistance switching behavior has been studied. The main point is accented on decrease the operation voltage. Two controllable resistance states were observed by applying voltage pulses. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Space Charge Limited Current(SCLC).