Characterization Of Nanodevices By STEM Tomography

摘要

A vertical nanowire tunnel field effect transistor (TFET) and a bit cost scalable (BICS) flash memory are characterized by electron tomography. The optimum measurement conditions are investigated by comparison of the 3D reconstructions obtained with different specimen geometries and different image modes. The few nm thick layers of both devices are clearly observed on the 3D reconstructions, showing the high resolution of this technique and its importance for the analysis of nanodevices.