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Effect of Doping Nb_2O_5 on Microstructure and Properties of Piezoelectric ceramics PSZT

机译:掺杂NB_2O_5对压电陶瓷PSZT微观结构和性能的影响

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To improve the electrical properties of PSZT piezoelectric ceramics, a ceramic powder Pb_(0.94)Sr_(0.06)(Zr_(0.52)Ti_(0.48))O_3 (PSZT) with Nb_2O_5 was designed. The power was prepared by solid state sintering. The surface structure of sample was characterized using SEM, and the crystal structure of the sample was examined by XRD. The capacitance and dielectric loss of sample was measured by Tonghui Electronics TH2618 capacitor tester. The result of microstructure and electrical properties show that Nb_2O_5 inhibit crystal growth when the contents of Nb_2O_5 is less than 0.5.wt%, but excessive Nb_2O_5 cause pyrochlore phase producing while the contents of Nb_2O_5 more than 0.5wt.%. The excellent piezoelectric properties are achieved in the ceramics with 0.5wt.% Nb_2O_5:ε_r=1504, tanδ=0.0065, d_(33)=336pC/N, kp=0.562.
机译:为了提高PSZT压电陶瓷的电性能,设计了具有NB_2O_5的陶瓷粉末PB_(0.06)SR_(0.06)(0.06)(0.06))O_3(PSZT)。功率由固态烧结制备。使用SEM表征样品的表面结构,并通过XRD检查样品的晶体结构。通过通惠电子TH2618电容器测试仪测量样品的电容和介电损耗。微观结构和电学性质的结果表明,当Nb_2O_5的含量小于0.5.wt%时,Nb_2O_5抑制晶体生长,但过量的Nb_2O_5引起烧纤维相的产生而Nb_2O_5的含量大于0.5wt。%。在陶瓷中实现优异的压电性能,在陶瓷中,0.5wt%。%Nb_2O_5:ε_r= 1504,tanδ= 0.0065,d_(33)= 336pc / n,kp = 0.562。

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