Temperature Dependence of Microwave Dielectric Properties of SiO_2/BN Composite

摘要

In this presentation, the dielectric properties of SiO_2/BN composite is studied using the logarithmic rule in the GEM equation. It is found that the dielectric constant of the composite material is effected by the contens of Si_2N_2O and temperature. And because the dielectric constant of SiO_2 is smaller and its variation is more stable, so when the content of BN is not high, the dielectric constant of SiO_2/BN is lower and more stable. Also, it is found that the influence of frequency on the dielectric constant of the composite is relatively small, while its influence on the dielectric loss is more obvious, and when the temperature is relatively low, the influence is bigger, which is related to a bigger relaxation loss phase at a low temperature.